IndiumV3, Russie, Analysis, bibRecord, 000212

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Identifieur interne : 000212 ( Russie/Analysis ); précédent : 000211; suivant : 000213

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Auteurs : RBID : Pascal:09-0077001

Descripteurs français

Pascal (Inist)
- Méthode MOVPE, Epitaxie phase vapeur, Semiconducteur III-V, Composé III-V, Puits quantique multiple, Morphologie surface, Morphologie cristalline, Structure cristalline, Microscopie force atomique, Diffraction RX, Spectrométrie SIMS, Electroluminescence, Déplacement raie, Méthode MOCVD, Nitrure de gallium, Nitrure d'indium, Diode électroluminescente, Dispositif optoélectronique, InGaN, GaN, 8115K, 6166, 7860F, 8115G.

English descriptors

KwdEn :
- Atomic force microscopy, Crystal morphology, Crystal structure, Electroluminescence, Gallium nitride, III-V compound, III-V semiconductors, Indium nitride, Light emitting diodes, MOCVD, MOVPE method, Multiple quantum well, Optoelectronic devices, Secondary ion mass spectrometry, Spectral line shift, Surface morphology, VPE, XRD.

Abstract

This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range of 0-2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to increase almost 50% at 20 mA injection current by introducing an optimized UL under the MQW stack in the LED structure. Also a decrease in the full width of half maximum (FWHM) and the blue-shift of the EL spectrum compared to the reference sample were observed in the all UL consisting samples.

Links toward previous steps (curation, corpus...)

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Links to Exploration step

Pascal:09-0077001

Le document en format XML

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<author><name sortKey="Torm, P T" uniqKey="Torm P">P. T. Törm</name>
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<author><name sortKey="Svensk, O" uniqKey="Svensk O">O. Svensk</name>
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<author><name sortKey="Ali, M" uniqKey="Ali M">M. Ali</name>
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<term>Crystal morphology</term>
<term>Crystal structure</term>
<term>Electroluminescence</term>
<term>Gallium nitride</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium nitride</term>
<term>Light emitting diodes</term>
<term>MOCVD</term>
<term>MOVPE method</term>
<term>Multiple quantum well</term>
<term>Optoelectronic devices</term>
<term>Secondary ion mass spectrometry</term>
<term>Spectral line shift</term>
<term>Surface morphology</term>
<term>VPE</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Puits quantique multiple</term>
<term>Morphologie surface</term>
<term>Morphologie cristalline</term>
<term>Structure cristalline</term>
<term>Microscopie force atomique</term>
<term>Diffraction RX</term>
<term>Spectrométrie SIMS</term>
<term>Electroluminescence</term>
<term>Déplacement raie</term>
<term>Méthode MOCVD</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Diode électroluminescente</term>
<term>Dispositif optoélectronique</term>
<term>InGaN</term>
<term>GaN</term>
<term>8115K</term>
<term>6166</term>
<term>7860F</term>
<term>8115G</term>
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<front><div type="abstract" xml:lang="en">This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range of 0-2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to increase almost 50% at 20 mA injection current by introducing an optimized UL under the MQW stack in the LED structure. Also a decrease in the full width of half maximum (FWHM) and the blue-shift of the EL spectrum compared to the reference sample were observed in the all UL consisting samples.</div>
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   |texte=   Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
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Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

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